stock de pièces: 2900
Type FET: 2 N-Channel (Half Bridge), Fonction FET: GaNFET (Gallium Nitride), Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 10A (Ta), 40A (Ta), Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA,