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Transistors - FET, MOSFET - Tableaux

SSM6P49NU,LF
Toshiba Semiconductor and Storage

SSM6P49NU,LF

stock de pièces: 154268

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 4A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V, Vgs(th) (Max) @ Id: 1.2V @ 1mA,

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SSM6N16FUTE85LF
Toshiba Semiconductor and Storage

SSM6N16FUTE85LF

stock de pièces: 9999

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 100mA, Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs(th) (Max) @ Id: 1.1V @ 100µA,

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FDS9933A
ON Semiconductor

FDS9933A

stock de pièces: 190178

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 3.8A, Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.8A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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FDC6506P
ON Semiconductor

FDC6506P

stock de pièces: 194858

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 1.8A, Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.8A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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NVMFD5483NLT1G
ON Semiconductor

NVMFD5483NLT1G

stock de pièces: 65498

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 6.4A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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FDC6305N
ON Semiconductor

FDC6305N

stock de pièces: 129016

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 2.7A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.7A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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NTUD3129PT5G
ON Semiconductor

NTUD3129PT5G

stock de pièces: 2940

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 140mA, Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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NVMFD5875NLT1G
ON Semiconductor

NVMFD5875NLT1G

stock de pièces: 155747

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 7A, Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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FDMS3668S
ON Semiconductor

FDMS3668S

stock de pièces: 82251

Type FET: 2 N-Channel (Dual) Asymmetrical, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 13A, 18A, Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs(th) (Max) @ Id: 2.7V @ 250µA,

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NVMFD5C470NLWFT1G
ON Semiconductor

NVMFD5C470NLWFT1G

stock de pièces: 277

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 11A (Ta), 36A (Tc), Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 5A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 20µA,

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FF11MR12W1M1B11BOMA1
Infineon Technologies

FF11MR12W1M1B11BOMA1

stock de pièces: 3093

Type FET: 2 N-Channel (Dual), Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 100A, Rds On (Max) @ Id, Vgs: 11 mOhm @ 100A, 15V, Vgs(th) (Max) @ Id: 5.55V @ 40mA,

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IRF6723M2DTR1P
Infineon Technologies

IRF6723M2DTR1P

stock de pièces: 3004

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 15A, Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.35V @ 25µA,

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TSM6968SDCA RVG
Taiwan Semiconductor Corporation

TSM6968SDCA RVG

stock de pièces: 9997

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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DMN2016LHAB-7
Diodes Incorporated

DMN2016LHAB-7

stock de pièces: 190312

Type FET: 2 N-Channel (Dual) Common Drain, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 7.5A, Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 4A, 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 250µA,

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DMG1016VQ-13
Diodes Incorporated

DMG1016VQ-13

stock de pièces: 163191

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 870mA, 640mA, Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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DMC1030UFDB-13
Diodes Incorporated

DMC1030UFDB-13

stock de pièces: 115059

Type FET: N and P-Channel Complementary, Fonction FET: Standard, Drain à la tension de source (Vdss): 12V, Courant - Vidange continue (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta), Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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DMN2029USD-13
Diodes Incorporated

DMN2029USD-13

stock de pièces: 136935

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 5.8A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.5A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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ZXMHC6A07T8TA
Diodes Incorporated

ZXMHC6A07T8TA

stock de pièces: 83548

Type FET: 2 N and 2 P-Channel (H-Bridge), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 1.6A, 1.3A, Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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SH8M41TB1
Rohm Semiconductor

SH8M41TB1

stock de pièces: 127833

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 80V, Courant - Vidange continue (Id) @ 25°C: 3.4A, 2.6A, Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA,

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QH8KA4TCR
Rohm Semiconductor

QH8KA4TCR

stock de pièces: 78816

Type FET: 2 N-Channel (Dual), Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 9A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 7A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 1mA,

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TT8J21TR
Rohm Semiconductor

TT8J21TR

stock de pièces: 169061

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 2.5A, Rds On (Max) @ Id, Vgs: 68 mOhm @ 2.5A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA,

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SH8J66TB1
Rohm Semiconductor

SH8J66TB1

stock de pièces: 75609

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 9A, Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA,

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SI3590DV-T1-GE3
Vishay Siliconix

SI3590DV-T1-GE3

stock de pièces: 199636

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 2.5A, 1.7A, Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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SI7998DP-T1-GE3
Vishay Siliconix

SI7998DP-T1-GE3

stock de pièces: 103462

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 25A, 30A, Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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SIA915DJ-T4-GE3
Vishay Siliconix

SIA915DJ-T4-GE3

stock de pièces: 2966

Type FET: 2 P-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 3.7A (Ta), 4.5A (Tc), Rds On (Max) @ Id, Vgs: 87 mOhm @ 2.9A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA,

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SIZ322DT-T1-GE3
Vishay Siliconix

SIZ322DT-T1-GE3

stock de pièces: 266

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 25V, Courant - Vidange continue (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 6.35 mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA,

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SI5944DU-T1-GE3
Vishay Siliconix

SI5944DU-T1-GE3

stock de pièces: 2992

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 6A, Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.3A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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SI7997DP-T1-GE3
Vishay Siliconix

SI7997DP-T1-GE3

stock de pièces: 69522

Type FET: 2 P-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 60A, Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA,

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EPC2106ENGRT
EPC

EPC2106ENGRT

stock de pièces: 88131

Type FET: 2 N-Channel (Half Bridge), Fonction FET: GaNFET (Gallium Nitride), Drain à la tension de source (Vdss): 100V, Courant - Vidange continue (Id) @ 25°C: 1.7A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 600µA,

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TC1550TG-G
Microchip Technology

TC1550TG-G

stock de pièces: 16138

Type FET: N and P-Channel, Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Rds On (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA,

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STL65DN3LLH5
STMicroelectronics

STL65DN3LLH5

stock de pièces: 88941

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 65A, Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 9.5A, 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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STS2DNF30L
STMicroelectronics

STS2DNF30L

stock de pièces: 198813

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 3A, Rds On (Max) @ Id, Vgs: 110 mOhm @ 1A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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PMGD130UN,115
NXP USA Inc.

PMGD130UN,115

stock de pièces: 2962

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 1.2A, Rds On (Max) @ Id, Vgs: 145 mOhm @ 1.2A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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CTLDM303N-M832DS BK
Central Semiconductor Corp

CTLDM303N-M832DS BK

stock de pièces: 3045

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 40 mOhm @ 1.8A, 4.5V, Vgs(th) (Max) @ Id: 1.25V @ 250µA,

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MTMC8E280LBF
Panasonic Electronic Components

MTMC8E280LBF

stock de pièces: 139278

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 7A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 2A, 4.5V, Vgs(th) (Max) @ Id: 1.3V @ 1mA,

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VHM40-06P1
IXYS

VHM40-06P1

stock de pièces: 1544

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 600V, Courant - Vidange continue (Id) @ 25°C: 38A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 25A, 10V, Vgs(th) (Max) @ Id: 5.5V @ 3mA,

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