Transistors - FET, MOSFET - Tableaux | Produits à semi-conducteurs discrets | 100

SI5933DC-T1-GE3

stock de pièces: 2867

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 2.7A, Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI4563DY-T1-E3

stock de pièces: 2704

Type FET: N and P-Channel, Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs(th) (Max) @ Id: 2V @ 250µA,

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Vishay Siliconix

SI6969BDQ-T1-E3

stock de pièces: 2784

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 12V, Courant - Vidange continue (Id) @ 25°C: 4A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 4.5V, Vgs(th) (Max) @ Id: 800mV @ 250µA,

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Vishay Siliconix

VQ1006P-E3

stock de pièces: 2906

Type FET: 4 N-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 90V, Courant - Vidange continue (Id) @ 25°C: 400mA, Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA,

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Vishay Siliconix

SI4942DY-T1-E3

stock de pièces: 2870

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 5.3A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4940DY-T1-GE3

stock de pièces: 2808

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 4.2A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V, Vgs(th) (Max) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI4816DY-T1-E3

stock de pièces: 2905

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 5.3A, 7.7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs(th) (Max) @ Id: 2V @ 250µA,

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Vishay Siliconix

SI5509DC-T1-E3

stock de pièces: 2749

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 6.1A, 4.8A, Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 4.5V, Vgs(th) (Max) @ Id: 2V @ 250µA,

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Vishay Siliconix

SI4914BDY-T1-GE3

stock de pièces: 118908

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 8.4A, 8A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs(th) (Max) @ Id: 2.7V @ 250µA,

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Vishay Siliconix

SI4967DY-T1-E3

stock de pièces: 2883

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 12V, Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min),

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Vishay Siliconix

SI4940DY-T1-E3

stock de pièces: 2875

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 4.2A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V, Vgs(th) (Max) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI3529DV-T1-GE3

stock de pièces: 2831

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 2.5A, 1.95A, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.2A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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ON Semiconductor

FDMC8200S_F106

stock de pièces: 3352

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 6A, 8.5A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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ON Semiconductor

FW812-TL-E

stock de pièces: 2832

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 35V, Courant - Vidange continue (Id) @ 25°C: 10A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 2.6V @ 1mA,

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ON Semiconductor

NTLUD3191PZTBG

stock de pièces: 2826

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 1.1A, Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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ON Semiconductor

FDS8962C

stock de pièces: 2774

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 7A, 5A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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ON Semiconductor

NTMC1300R2

stock de pièces: 3306

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 2.2A, 1.8A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA,

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ON Semiconductor

FDW9926NZ

stock de pièces: 2770

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 4.5A, Rds On (Max) @ Id, Vgs: 32 mOhm @ 4.5A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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ON Semiconductor

FDR8308P

stock de pièces: 2748

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 3.2A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.2A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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ON Semiconductor

EMH2407-TL-H

stock de pièces: 165186

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 6A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 4.5V,

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Diodes Incorporated

ZXMD65P03N8TA

stock de pièces: 2983

Type FET: 2 P-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 3.8A, Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.9A, 10V, Vgs(th) (Max) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

ZXMD63P03XTC

stock de pièces: 2768

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.2A, 10V, Vgs(th) (Max) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

ZXMN10A08DN8TC

stock de pièces: 2701

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 100V, Courant - Vidange continue (Id) @ 25°C: 1.6A, Rds On (Max) @ Id, Vgs: 250 mOhm @ 3.2A, 10V, Vgs(th) (Max) @ Id: 2V @ 250µA (Min),

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Infineon Technologies

IRF7350PBF

stock de pièces: 2677

Type FET: N and P-Channel, Fonction FET: Standard, Drain à la tension de source (Vdss): 100V, Courant - Vidange continue (Id) @ 25°C: 2.1A, 1.5A, Rds On (Max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA,

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Infineon Technologies

IRF7317PBF

stock de pièces: 75561

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 6.6A, 5.3A, Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V, Vgs(th) (Max) @ Id: 700mV @ 250µA,

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Infineon Technologies

IRF7338PBF

stock de pièces: 2697

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 12V, Courant - Vidange continue (Id) @ 25°C: 6.3A, 3A, Rds On (Max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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Toshiba Semiconductor and Storage

TPCP8203(TE85L,F)

stock de pièces: 2780

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 4.7A, Vgs(th) (Max) @ Id: 2.5V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N7002BFE(T5L,F

stock de pièces: 2844

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 200mA, Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs(th) (Max) @ Id: 3.1V @ 250µA,

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Rohm Semiconductor

MP6M11TCR

stock de pièces: 2920

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 3.5A, Rds On (Max) @ Id, Vgs: 98 mOhm @ 3.5A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

MP6K14TCR

stock de pièces: 2899

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8M51TB1

stock de pièces: 2655

Type FET: N and P-Channel, Fonction FET: Standard, Drain à la tension de source (Vdss): 100V, Courant - Vidange continue (Id) @ 25°C: 3A, 2.5A,

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Texas Instruments

CSD75208W1015T

stock de pièces: 192795

Type FET: 2 P-Channel (Dual) Common Source, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 1.6A, Rds On (Max) @ Id, Vgs: 68 mOhm @ 1A, 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 250µA,

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STMicroelectronics

STS1DN45K3

stock de pièces: 2689

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 450V, Courant - Vidange continue (Id) @ 25°C: 500mA, Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4.5V @ 50µA,

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EPC

EPC2103

stock de pièces: 23026

Type FET: 2 N-Channel (Half Bridge), Fonction FET: GaNFET (Gallium Nitride), Drain à la tension de source (Vdss): 80V, Courant - Vidange continue (Id) @ 25°C: 28A, Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 7mA,

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EPC

EPC2105

stock de pièces: 24303

Type FET: 2 N-Channel (Half Bridge), Fonction FET: GaNFET (Gallium Nitride), Drain à la tension de source (Vdss): 80V, Courant - Vidange continue (Id) @ 25°C: 9.5A, 38A, Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA,

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IXYS

GWM120-0075X1-SMDSAM

stock de pièces: 2788

Type FET: 6 N-Channel (3-Phase Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 75V, Courant - Vidange continue (Id) @ 25°C: 110A, Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA,

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