Transistors - FET, MOSFET - Tableaux | Produits à semi-conducteurs discrets | 7

2N7335

stock de pièces: 2928

Type FET: 4 P-Channel, Fonction FET: Standard, Drain à la tension de source (Vdss): 100V, Courant - Vidange continue (Id) @ 25°C: 750mA, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA,

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Microsemi Corporation

2N7334

stock de pièces: 2895

Type FET: 4 N-Channel, Fonction FET: Standard, Drain à la tension de source (Vdss): 100V, Courant - Vidange continue (Id) @ 25°C: 1A, Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA,

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Microsemi Corporation

APTC60DSKM24T3G

stock de pièces: 765

Type FET: 2 N Channel (Dual Buck Chopper), Fonction FET: Super Junction, Drain à la tension de source (Vdss): 600V, Courant - Vidange continue (Id) @ 25°C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs(th) (Max) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTM100H45STG

stock de pièces: 605

Type FET: 4 N-Channel (H-Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 1000V (1kV), Courant - Vidange continue (Id) @ 25°C: 18A, Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTMC120TAM33CTPAG

stock de pièces: 107

Type FET: 6 N-Channel (3-Phase Bridge), Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 78A (Tc), Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V, Vgs(th) (Max) @ Id: 2.2V @ 3mA (Typ),

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Microsemi Corporation

APTM50H14FT3G

stock de pièces: 1149

Type FET: 4 N-Channel (H-Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 26A, Rds On (Max) @ Id, Vgs: 168 mOhm @ 13A, 10V, Vgs(th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTMC120AM25CT3AG

stock de pièces: 283

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 113A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V, Vgs(th) (Max) @ Id: 2.2V @ 4mA (Typ),

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Microsemi Corporation

APTSM120AM08CT6AG

stock de pièces: 144

Type FET: 2 N-Channel (Dual), Schottky, Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 370A (Tc), Rds On (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V, Vgs(th) (Max) @ Id: 3V @ 10mA,

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Microsemi Corporation

APTSM120TAM33CTPAG

stock de pièces: 177

Type FET: 6 N-Channel (3-Phase Bridge), Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 112A (Tc), Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V, Vgs(th) (Max) @ Id: 3V @ 3mA,

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Microsemi Corporation

APTSM120AM09CD3AG

stock de pièces: 195

Type FET: 2 N-Channel (Dual), Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 337A (Tc), Rds On (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V, Vgs(th) (Max) @ Id: 3V @ 9mA,

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Microsemi Corporation

APTSM120AM14CD3AG

stock de pièces: 248

Type FET: 2 N-Channel (Dual), Schottky, Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 337A (Tc), Rds On (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V, Vgs(th) (Max) @ Id: 3V @ 9mA,

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Microsemi Corporation

APTSM120AM55CT1AG

stock de pièces: 589

Type FET: 2 N-Channel (Dual), Schottky, Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 74A (Tc), Rds On (Max) @ Id, Vgs: 50 mOhm @ 40A, 20V, Vgs(th) (Max) @ Id: 3V @ 2mA,

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Microsemi Corporation

APTSM120AM25CT3AG

stock de pièces: 290

Type FET: 2 N-Channel (Dual), Schottky, Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 148A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V, Vgs(th) (Max) @ Id: 3V @ 4mA,

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Microsemi Corporation

APTMC120AM08CD3AG

stock de pièces: 68

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 250A (Tc), Rds On (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V, Vgs(th) (Max) @ Id: 2.2V @ 10mA (Typ),

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Microsemi Corporation

APTM50HM65FT3G

stock de pièces: 692

Type FET: 4 N-Channel (H-Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 51A, Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50AM38STG

stock de pièces: 559

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 90A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs(th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM100H45SCTG

stock de pièces: 480

Type FET: 4 N-Channel (H-Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 1000V (1kV), Courant - Vidange continue (Id) @ 25°C: 18A, Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100A13SCG

stock de pièces: 292

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 1000V (1kV), Courant - Vidange continue (Id) @ 25°C: 65A, Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 6mA,

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Microsemi Corporation

APTM50AM24SCG

stock de pièces: 372

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 150A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V, Vgs(th) (Max) @ Id: 5V @ 6mA,

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Microsemi Corporation

APTM120H140FT1G

stock de pièces: 1785

Type FET: 4 N-Channel (H-Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 1.68 Ohm @ 7A, 10V, Vgs(th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50H10FT3G

stock de pièces: 1187

Type FET: 4 N-Channel (H-Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 37A, Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM100A13DG

stock de pièces: 505

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 1000V (1kV), Courant - Vidange continue (Id) @ 25°C: 65A, Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 6mA,

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Microsemi Corporation

APTC60VDAM24T3G

stock de pièces: 1155

Type FET: 2 N-Channel (Dual), Fonction FET: Super Junction, Drain à la tension de source (Vdss): 600V, Courant - Vidange continue (Id) @ 25°C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs(th) (Max) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTM100H45FT3G

stock de pièces: 858

Type FET: 4 N-Channel (H-Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 1000V (1kV), Courant - Vidange continue (Id) @ 25°C: 18A, Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100A18FTG

stock de pièces: 728

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 1000V (1kV), Courant - Vidange continue (Id) @ 25°C: 43A, Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTMC120TAM12CTPAG

stock de pièces: 63

Type FET: 6 N-Channel (3-Phase Bridge), Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 220A (Tc), Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V, Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ),

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Microsemi Corporation

APTM20HM20FTG

stock de pièces: 799

Type FET: 4 N-Channel (H-Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 200V, Courant - Vidange continue (Id) @ 25°C: 89A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 44.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60HM70T3G

stock de pièces: 1635

Type FET: 4 N-Channel (H-Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 600V, Courant - Vidange continue (Id) @ 25°C: 39A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs(th) (Max) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTC60AM35SCTG

stock de pièces: 860

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 600V, Courant - Vidange continue (Id) @ 25°C: 72A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 36A, 10V, Vgs(th) (Max) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTC80DDA15T3G

stock de pièces: 1954

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 800V, Courant - Vidange continue (Id) @ 25°C: 28A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs(th) (Max) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTM50HM75FT3G

stock de pièces: 880

Type FET: 4 N-Channel (H-Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 46A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60AM242G

stock de pièces: 951

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 600V, Courant - Vidange continue (Id) @ 25°C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs(th) (Max) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTM50AM19FG

stock de pièces: 440

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 163A, Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM120DU15G

stock de pièces: 383

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 60A, Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V, Vgs(th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTC60DDAM35T3G

stock de pièces: 1490

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 600V, Courant - Vidange continue (Id) @ 25°C: 72A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs(th) (Max) @ Id: 3.9V @ 5.4mA,

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Microsemi Corporation

APTC60TAM24TPG

stock de pièces: 401

Type FET: 6 N-Channel (3-Phase Bridge), Fonction FET: Super Junction, Drain à la tension de source (Vdss): 600V, Courant - Vidange continue (Id) @ 25°C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs(th) (Max) @ Id: 3.9V @ 5mA,

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