stock de pièces: 222
Type FET: 4 N-Channel (Three Level Inverter), Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V, Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ),