stock de pièces: 2760
Type FET: 2 N-Channel (Half Bridge), Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1000V (1kV), Courant - Vidange continue (Id) @ 25°C: 36A, Rds On (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V, Vgs(th) (Max) @ Id: 5V @ 5mA,