Transistors - FET, MOSFET - Tableaux | Produits à semi-conducteurs discrets | 100

SI4931DY-T1-GE3

stock de pièces: 180864

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 12V, Courant - Vidange continue (Id) @ 25°C: 6.7A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 350µA,

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Vishay Siliconix

SI4228DY-T1-GE3

stock de pièces: 190253

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 25V, Courant - Vidange continue (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V, Vgs(th) (Max) @ Id: 1.4V @ 250µA,

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Vishay Siliconix

SI8902AEDB-T2-E1

stock de pièces: 3310

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 24V, Courant - Vidange continue (Id) @ 25°C: 11A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 1A, 4.5V, Vgs(th) (Max) @ Id: 900mV @ 250µA,

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Vishay Siliconix

SQJ960EP-T1_GE3

stock de pièces: 77437

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SIA527DJ-T1-GE3

stock de pièces: 180836

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 12V, Courant - Vidange continue (Id) @ 25°C: 4.5A, Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SIB912DK-T1-GE3

stock de pièces: 125137

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 1.5A, Rds On (Max) @ Id, Vgs: 216 mOhm @ 1.8A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI9933CDY-T1-GE3

stock de pièces: 185277

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 4A, Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V, Vgs(th) (Max) @ Id: 1.4V @ 250µA,

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Vishay Siliconix

SI7942DP-T1-E3

stock de pièces: 63525

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 100V, Courant - Vidange continue (Id) @ 25°C: 3.8A, Rds On (Max) @ Id, Vgs: 49 mOhm @ 5.9A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA,

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Vishay Siliconix

SI7922DN-T1-GE3

stock de pièces: 86516

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 100V, Courant - Vidange continue (Id) @ 25°C: 1.8A, Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA,

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Vishay Siliconix

SI1036X-T1-GE3

stock de pièces: 2514

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 610mA (Ta), Rds On (Max) @ Id, Vgs: 540 mOhm @ 500mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI7956DP-T1-GE3

stock de pièces: 44000

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 150V, Courant - Vidange continue (Id) @ 25°C: 2.6A, Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.1A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA,

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Nexperia USA Inc.

NX1029X,115

stock de pièces: 166606

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, 50V, Courant - Vidange continue (Id) @ 25°C: 330mA, 170mA, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA,

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Nexperia USA Inc.

PMGD780SN,115

stock de pièces: 171536

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 490mA, Rds On (Max) @ Id, Vgs: 920 mOhm @ 300mA, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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Rohm Semiconductor

EM6K1T2R

stock de pièces: 188653

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 100mA, Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V, Vgs(th) (Max) @ Id: 1.5V @ 100µA,

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Rohm Semiconductor

QS5K2TR

stock de pièces: 110824

Type FET: 2 N-Channel (Dual) Common Source, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 2A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

QH8JA1TCR

stock de pièces: 135582

Type FET: 2 P-Channel (Dual), Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 5A, Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 1mA,

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Rohm Semiconductor

UM6K1NTN

stock de pièces: 176441

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 100mA, Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V, Vgs(th) (Max) @ Id: 1.5V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6N56FE,LM

stock de pièces: 179879

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, 1.5V Drive, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 800mA, Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N15AFE,LM

stock de pièces: 178067

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 100mA, Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V, Vgs(th) (Max) @ Id: 1.5V @ 100µA,

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ON Semiconductor

FDG6301N-F085

stock de pièces: 2507

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 25V, Courant - Vidange continue (Id) @ 25°C: 220mA, Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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ON Semiconductor

NVMFD5485NLWFT3G

stock de pièces: 90689

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 5.3A, Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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ON Semiconductor

NVLJD4007NZTAG

stock de pièces: 139596

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 245mA, Rds On (Max) @ Id, Vgs: 7 Ohm @ 125mA, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 100µA,

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ON Semiconductor

EFC6605R-TR

stock de pièces: 197820

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, 2.5V Drive,

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Infineon Technologies

IPG20N04S4L08AATMA1

stock de pièces: 137972

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 20A, Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 22µA,

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Infineon Technologies

IPG20N06S415ATMA2

stock de pièces: 113173

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 20A, Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V, Vgs(th) (Max) @ Id: 4V @ 20µA,

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Infineon Technologies

IPG20N04S4L11ATMA1

stock de pièces: 172926

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 20A, Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 17A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 15µA,

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Infineon Technologies

IRF7341GTRPBF

stock de pièces: 82222

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 55V, Courant - Vidange continue (Id) @ 25°C: 5.1A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs(th) (Max) @ Id: 1V @ 250µA (Min),

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Infineon Technologies

IPG20N04S4L07ATMA1

stock de pièces: 104521

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 20A, Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 17A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 30µA,

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Infineon Technologies

IRF7314TRPBF

stock de pièces: 193267

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 5.3A, Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V, Vgs(th) (Max) @ Id: 700mV @ 250µA,

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Diodes Incorporated

DMG1023UV-7

stock de pièces: 104503

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 1.03A, Rds On (Max) @ Id, Vgs: 750 mOhm @ 430mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMN2011UFX-7

stock de pièces: 171759

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 12.2A (Ta), Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMC1017UPD-13

stock de pièces: 2684

Type FET: N and P-Channel Complementary, Fonction FET: Standard, Drain à la tension de source (Vdss): 12V, Courant - Vidange continue (Id) @ 25°C: 13A (Ta), 9.4A (Ta), Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, 32 mOhm @ 8.9A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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Diodes Incorporated

ZXMD63P03XTA

stock de pièces: 60635

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.2A, 10V, Vgs(th) (Max) @ Id: 1V @ 250µA (Min),

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Texas Instruments

CSD88537ND

stock de pièces: 132851

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 15A, Rds On (Max) @ Id, Vgs: 15 mOhm @ 8A, 10V, Vgs(th) (Max) @ Id: 3.6V @ 250µA,

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Panasonic Electronic Components

UP0497900L

stock de pièces: 2637

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 50V, 30V, Courant - Vidange continue (Id) @ 25°C: 100mA, Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs(th) (Max) @ Id: 1.5V @ 1µA,

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Panasonic Electronic Components

UP0487C00L

stock de pièces: 188334

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 100mA, Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V, Vgs(th) (Max) @ Id: 1.3V @ 50µA,

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