Transistors - FET, MOSFET - Tableaux | Produits à semi-conducteurs discrets | 100

PMGD280UN,115

stock de pièces: 179576

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 870mA, Rds On (Max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Nexperia USA Inc.

NX3020NAKV,115

stock de pièces: 155135

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 200mA, Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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Nexperia USA Inc.

PMGD175XNEX

stock de pièces: 139161

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 870mA (Ta), Rds On (Max) @ Id, Vgs: 252 mOhm @ 900mA, 4.5V, Vgs(th) (Max) @ Id: 1.25V @ 250µA,

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ON Semiconductor

NVMFD5873NLWFT1G

stock de pièces: 71856

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 10A, Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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ON Semiconductor

NTJD4105CT1G

stock de pièces: 180528

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, 8V, Courant - Vidange continue (Id) @ 25°C: 630mA, 775mA, Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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ON Semiconductor

FDS4935BZ

stock de pièces: 185680

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 6.9A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.9A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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ON Semiconductor

FDME1024NZT

stock de pièces: 131909

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 3.8A, Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SQJ968EP-T1_GE3

stock de pièces: 165139

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 23.5A (Tc), Rds On (Max) @ Id, Vgs: 33.6 mOhm @ 4.8A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SIZ710DT-T1-GE3

stock de pièces: 110666

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 16A, 35A, Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 19A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SI5513CDC-T1-E3

stock de pièces: 128739

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 4A, 3.7A, Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI4286DY-T1-GE3

stock de pièces: 153479

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 7A, Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 8A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SQ4946AEY-T1_GE3

stock de pièces: 121475

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 7A, Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.5A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SIB900EDK-T1-GE3

stock de pièces: 148740

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 1.5A, Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI5515CDC-T1-E3

stock de pièces: 195955

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 36 mOhm @ 6A, 4.5V, Vgs(th) (Max) @ Id: 800mV @ 250µA,

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Vishay Siliconix

SQ3585EV-T1_GE3

stock de pièces: 2632

Type FET: N and P-Channel, Fonction FET: Standard, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc), Rds On (Max) @ Id, Vgs: 77 mOhm @ 1A, 4.5V, 166 mOhm @ 1A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI1922EDH-T1-GE3

stock de pièces: 148911

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 1.3A, Rds On (Max) @ Id, Vgs: 198 mOhm @ 1A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI7212DN-T1-GE3

stock de pièces: 141942

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 4.9A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.8A, 10V, Vgs(th) (Max) @ Id: 1.6V @ 250µA,

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Vishay Siliconix

SQS966ENW-T1_GE3

stock de pièces: 2544

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 36 mOhm @ 1.25A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI1016CX-T1-GE3

stock de pièces: 151464

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Rds On (Max) @ Id, Vgs: 396 mOhm @ 500mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF7311TRPBF

stock de pièces: 168715

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 6.6A, Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V, Vgs(th) (Max) @ Id: 700mV @ 250µA,

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Infineon Technologies

IRF7316TRPBF

stock de pièces: 172337

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 4.9A, Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF7904TRPBF

stock de pièces: 188754

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 7.6A, 11A, Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V, Vgs(th) (Max) @ Id: 2.25V @ 25µA,

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Infineon Technologies

IRF7303TRPBF

stock de pièces: 185377

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 4.9A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Infineon Technologies

IPG20N04S408AATMA1

stock de pièces: 101294

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 20A, Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 17A, 10V, Vgs(th) (Max) @ Id: 4V @ 30µA,

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Infineon Technologies

IRF7342TRPBF

stock de pièces: 156976

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 55V, Courant - Vidange continue (Id) @ 25°C: 3.4A, Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Rohm Semiconductor

SH8K4TB1

stock de pièces: 107909

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 9A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

QS8J1TR

stock de pièces: 162895

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 12V, Courant - Vidange continue (Id) @ 25°C: 4.5A, Rds On (Max) @ Id, Vgs: 29 mOhm @ 4.5A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA,

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Rohm Semiconductor

QS8J11TCR

stock de pièces: 180714

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, 1.5V Drive, Drain à la tension de source (Vdss): 12V, Courant - Vidange continue (Id) @ 25°C: 3.5A, Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA,

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Diodes Incorporated

DMN6040SSD-13

stock de pièces: 169983

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 5A, Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.5A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMN3018SSD-13

stock de pièces: 138401

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 6.7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA,

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Diodes Incorporated

DMN2004VK-7

stock de pièces: 165948

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 540mA, Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMP4025LSD-13

stock de pièces: 193316

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 6.9A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA,

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Diodes Incorporated

DMN63D8LDW-7

stock de pièces: 177171

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 220mA, Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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Diodes Incorporated

DMN5L06VK-7

stock de pièces: 133884

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 50V, Courant - Vidange continue (Id) @ 25°C: 280mA, Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Taiwan Semiconductor Corporation

TSM6968DCA RVG

stock de pièces: 25858

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Central Semiconductor Corp

CMLDM7484 TR

stock de pièces: 177095

Type FET: N and P-Channel Complementary, Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 450mA, Rds On (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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