Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 12V, Courant - Vidange continue (Id) @ 25°C: 700mA, Rds On (Max) @ Id, Vgs: 270 mOhm @ 700mA, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 11.7A (Ta), 36A (Tc), Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 7.4A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 25A (Ta), 145A (Tc), Rds On (Max) @ Id, Vgs: 2.65 mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 90µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 80V, Courant - Vidange continue (Id) @ 25°C: 1.1A, Rds On (Max) @ Id, Vgs: 215 mOhm @ 2.2A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 15A, Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 25V, Courant - Vidange continue (Id) @ 25°C: 460mA, Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 500mA, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,
Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 4.1A, 3A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 2 N-Channel (Dual) Common Drain, Fonction FET: Logic Level Gate, 2.5V Drive,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 11A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 25µA,
Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 2.8A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 6.4A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 80A, Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 2 N-Channel (Dual) Common Source, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 27A, Rds On (Max) @ Id, Vgs: 33 mOhm @ 7A , 8V, Vgs(th) (Max) @ Id: 1.3V @ 250µA,
Type FET: 2 N-Channel (Half Bridge), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 30A, Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 25A, 8V, Vgs(th) (Max) @ Id: 1.9V @ 250µA,
Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 30A, 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA,
Type FET: 4 N-Channel, Fonction FET: Standard, Courant - Vidange continue (Id) @ 25°C: 14.8A (Ta), Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 4 N-Channel (H-Bridge), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 1.4A, Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 7.3A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 11A, 10V, Vgs(th) (Max) @ Id: 2V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 3.7A (Ta), Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 550mA (Ta), Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 3.7A (Ta), Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 5.4A, Rds On (Max) @ Id, Vgs: 27 mOhm @ 7A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 5.7A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA,
Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 410mA, Rds On (Max) @ Id, Vgs: 995 mOhm @ 410mA, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,
Type FET: 2 N-Channel (Half Bridge), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 16A, Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 15 mOhm @ 7A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,
Type FET: N and P-Channel, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA,
Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 12V, Courant - Vidange continue (Id) @ 25°C: 4.5A, Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 100V, Courant - Vidange continue (Id) @ 25°C: 75A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A, 10V, Vgs(th) (Max) @ Id: 4V @ 4mA,
Drain à la tension de source (Vdss): 600V, Courant - Vidange continue (Id) @ 25°C: 50A (Tc),
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 70V, Courant - Vidange continue (Id) @ 25°C: 165A, Rds On (Max) @ Id, Vgs: 7 mOhm @ 82.5A, 10V, Vgs(th) (Max) @ Id: 4V @ 8mA,
Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 6A, 4.5A, Rds On (Max) @ Id, Vgs: 26 mOhm @ 3A, 10V, Vgs(th) (Max) @ Id: 2V @ 1mA,