Type FET: 2 N-Channel (Dual) Asymmetrical, Fonction FET: Standard, Drain à la tension de source (Vdss): 75V, Courant - Vidange continue (Id) @ 25°C: 120A, Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 100A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 200V, Courant - Vidange continue (Id) @ 25°C: 84A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 8mA,
Type FET: 6 N-Channel (3-Phase Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 180A, Vgs(th) (Max) @ Id: 4V @ 1mA,
Type FET: 6 N-Channel (3-Phase Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 75V, Courant - Vidange continue (Id) @ 25°C: 270A, Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 100A, 10V, Vgs(th) (Max) @ Id: 4V @ 500µA,
Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 2.7A, 1.9A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.7A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 21A (Ta), 111A (Tc), Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 98µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 24A (Ta), 127A (Tc), Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 30A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA,
Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 3.2A, 2.5A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,
Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 600mA, Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,
Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 25V, Courant - Vidange continue (Id) @ 25°C: 220mA, 140mA, Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,
Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 4.5A, 3.5A, Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 8V, Courant - Vidange continue (Id) @ 25°C: 775mA, Rds On (Max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 900mA (Ta), Rds On (Max) @ Id, Vgs: 252 mOhm @ 900mA, 4.5V, Vgs(th) (Max) @ Id: 1.25V @ 250µA,
Type FET: N and P-Channel, Fonction FET: Logic Level Gate, 4.5V Drive, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 6.8A, 4.9A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 5.5A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 10V, Vgs(th) (Max) @ Id: 2V @ 250µA,
Type FET: N and P-Channel, Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 650mA, 450mA, Rds On (Max) @ Id, Vgs: 400 mOhm @ 590mA, 10V, Vgs(th) (Max) @ Id: 1.6V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 50V, Courant - Vidange continue (Id) @ 25°C: 280mA (Ta), Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA,
Type FET: 2 P-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,
Type FET: 2 N and 2 P-Channel (H-Bridge), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 2.17A, 1.64A, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 660mA, Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,
Type FET: N and P-Channel, Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 6A, 4.3A, Rds On (Max) @ Id, Vgs: 47 mOhm @ 3.5A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 2 P-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.9A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,
Type FET: 2 N-Channel (Half Bridge), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 16A, 35A, Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,
Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 2.9A, 2.1A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 250µA,
Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 6.3A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.4A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs(th) (Max) @ Id: 2V @ 250µA,
Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 4.5V, Vgs(th) (Max) @ Id: 600mV @ 250µA,
Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 15A, Vgs(th) (Max) @ Id: 2.1V, 1.2V @ 250µA,
Type FET: N and P-Channel, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 6.3A, 8.6A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 6A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,
Type FET: 3 N and 3 P-Channel (3-Phase Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 1.5A,
Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, 1.2V Drive, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 100µA,
