Transistors - FET, MOSFET - Tableaux

Infineon Technologies

AUIRF7343Q

stock de pièces: 2791

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 55V, Courant - Vidange continue (Id) @ 25°C: 4.7A, 3.4A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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Advanced Linear Devices Inc.

ALD1115MAL

stock de pièces: 31406

Type FET: N and P-Channel Complementary, Fonction FET: Standard, Drain à la tension de source (Vdss): 10.6V, Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V, Vgs(th) (Max) @ Id: 1V @ 1µA,

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Advanced Linear Devices Inc.

ALD111933MAL

stock de pièces: 33438

Type FET: 2 N-Channel (Dual) Matched Pair, Fonction FET: Standard, Drain à la tension de source (Vdss): 10.6V, Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.9V, Vgs(th) (Max) @ Id: 3.35V @ 1µA,

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Alpha & Omega Semiconductor Inc.

AO6810

stock de pièces: 3334

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 3.5A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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Microsemi Corporation

APTM60A23FT1G

stock de pièces: 2807

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 600V, Courant - Vidange continue (Id) @ 25°C: 20A, Rds On (Max) @ Id, Vgs: 276 mOhm @ 17A, 10V, Vgs(th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50TDUM65PG

stock de pièces: 3356

Type FET: 6 N-Channel (3-Phase Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 51A, Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50DUM38TG

stock de pièces: 2789

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 90A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs(th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM50DUM25TG

stock de pièces: 2781

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 149A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V, Vgs(th) (Max) @ Id: 4V @ 8mA,

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Microsemi Corporation

APTM50DUM35TG

stock de pièces: 2820

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 99A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM50DUM19G

stock de pièces: 2832

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 163A, Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM50DUM17G

stock de pièces: 2758

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 180A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V, Vgs(th) (Max) @ Id: 5V @ 10mA,

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APTM50DSKM65T3G

Microsemi Corporation

APTM50DSKM65T3G

stock de pièces: 3279

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 51A, Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50DHM75TG

stock de pièces: 2739

Type FET: 2 N-Channel (Dual) Asymmetrical, Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 46A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50DSK10T3G

stock de pièces: 2805

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 37A, Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50DHM65TG

stock de pièces: 3354

Type FET: 2 N-Channel (Dual) Asymmetrical, Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 51A, Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50AM25FTG

stock de pièces: 2755

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 149A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V, Vgs(th) (Max) @ Id: 4V @ 8mA,

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Microsemi Corporation

APTM50AM70FT1G

stock de pièces: 2771

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 50A, Rds On (Max) @ Id, Vgs: 84 mOhm @ 42A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50A15FT1G

stock de pièces: 2761

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 25A, Rds On (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V, Vgs(th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50AM19STG

stock de pièces: 2747

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 500V, Courant - Vidange continue (Id) @ 25°C: 170A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 85A, 10V, Vgs(th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM20DUM10TG

stock de pièces: 2803

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 200V, Courant - Vidange continue (Id) @ 25°C: 175A, Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20TDUM16PG

stock de pièces: 2825

Type FET: 6 N-Channel (3-Phase Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 200V, Courant - Vidange continue (Id) @ 25°C: 104A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM20DUM05TG

stock de pièces: 2827

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 200V, Courant - Vidange continue (Id) @ 25°C: 333A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 166.5A, 10V, Vgs(th) (Max) @ Id: 4V @ 8mA,

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Microsemi Corporation

APTM20DHM10G

stock de pièces: 2785

Type FET: 2 N-Channel (Dual) Asymmetrical, Fonction FET: Standard, Drain à la tension de source (Vdss): 200V, Courant - Vidange continue (Id) @ 25°C: 175A, Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20DHM16TG

stock de pièces: 2733

Type FET: 2 N-Channel (Dual) Asymmetrical, Fonction FET: Standard, Drain à la tension de source (Vdss): 200V, Courant - Vidange continue (Id) @ 25°C: 104A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM20DHM08G

stock de pièces: 2824

Type FET: 2 N-Channel (Dual) Asymmetrical, Fonction FET: Standard, Drain à la tension de source (Vdss): 200V, Courant - Vidange continue (Id) @ 25°C: 208A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs(th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20AM05FTG

stock de pièces: 2762

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 200V, Courant - Vidange continue (Id) @ 25°C: 333A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 166.5A, 10V, Vgs(th) (Max) @ Id: 4V @ 8mA,

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Microsemi Corporation

APTM120TDU57PG

stock de pièces: 2732

Type FET: 6 N-Channel (3-Phase Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 17A, Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120H57FT3G

stock de pièces: 2766

Type FET: 4 N-Channel (H-Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 17A, Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120DU29TG

stock de pièces: 2792

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 34A, Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V, Vgs(th) (Max) @ Id: 5V @ 5mA,

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APTM120DSK57T3G

Microsemi Corporation

APTM120DSK57T3G

stock de pièces: 2791

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 17A, Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120A80FT1G

stock de pièces: 2744

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 14A, Rds On (Max) @ Id, Vgs: 960 mOhm @ 12A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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APTM120DDA57T3G

Microsemi Corporation

APTM120DDA57T3G

stock de pièces: 2827

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 17A, Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120A65FT1G

stock de pièces: 2750

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 16A, Rds On (Max) @ Id, Vgs: 780 mOhm @ 14A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM10TDUM19PG

stock de pièces: 2820

Type FET: 6 N-Channel (3-Phase Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 100V, Courant - Vidange continue (Id) @ 25°C: 70A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTM10TDUM09PG

stock de pièces: 2746

Type FET: 6 N-Channel (3-Phase Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 100V, Courant - Vidange continue (Id) @ 25°C: 139A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM10HM09FTG

stock de pièces: 2809

Type FET: 4 N-Channel (H-Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 100V, Courant - Vidange continue (Id) @ 25°C: 139A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA,

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3600

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