La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 650V, Courant - Vidange continue (Id) @ 25°C: 15A (Tc) (155°C), Rds On (Max) @ Id, Vgs: 105 mOhm @ 15A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 650V, Courant - Vidange continue (Id) @ 25°C: 8A (Tc) (158°C), Rds On (Max) @ Id, Vgs: 170 mOhm @ 8A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 650V, Courant - Vidange continue (Id) @ 25°C: 7A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 170 mOhm @ 7A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 650V, Courant - Vidange continue (Id) @ 25°C: 4A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 650V, Courant - Vidange continue (Id) @ 25°C: 16A (Tc) (155°C), Rds On (Max) @ Id, Vgs: 105 mOhm @ 16A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1200V, Courant - Vidange continue (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 600V, Courant - Vidange continue (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 300V, Courant - Vidange continue (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 240 mOhm @ 5A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1200V, Courant - Vidange continue (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 100V, Courant - Vidange continue (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 240 mOhm @ 5A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1700V, Courant - Vidange continue (Id) @ 25°C: 4A (Tc) (95°C), Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1700V, Courant - Vidange continue (Id) @ 25°C: 8A (Tc) (90°C), Rds On (Max) @ Id, Vgs: 250 mOhm @ 8A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1200V, Courant - Vidange continue (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 60 mOhm @ 20A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1200V, Courant - Vidange continue (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 120 mOhm @ 10A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1200V, Courant - Vidange continue (Id) @ 25°C: 15A (Tc),
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1700V, Courant - Vidange continue (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 10 mOhm @ 100A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1200V, Courant - Vidange continue (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 10 mOhm @ 100A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1200V, Courant - Vidange continue (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1700V, Courant - Vidange continue (Id) @ 25°C: 16A (Tc) (90°C), Rds On (Max) @ Id, Vgs: 110 mOhm @ 16A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1200V, Courant - Vidange continue (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 140 mOhm @ 10A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1200V, Courant - Vidange continue (Id) @ 25°C: 3A (Tc) (95°C), Rds On (Max) @ Id, Vgs: 460 mOhm @ 3A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1200V, Courant - Vidange continue (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 50 mOhm @ 20A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1700V, Courant - Vidange continue (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1200V, Courant - Vidange continue (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 280 mOhm @ 5A,
La technologie: SiC (Silicon Carbide Junction Transistor), Drain à la tension de source (Vdss): 1200V, Courant - Vidange continue (Id) @ 25°C: 6A (Tc) (90°C), Rds On (Max) @ Id, Vgs: 220 mOhm @ 6A,
