stock de pièces: 121
Type FET: 4 N-Channel (Three Level Inverter), Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 219A (Tc), Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V, Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ),