stock de pièces: 413
Type FET: 6 N-Channel (3-Phase Bridge), Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 29.5A (Tc), Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V, Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ),