Transistors - FET, MOSFET - Tableaux | Produits à semi-conducteurs discrets | 18

SI7216DN-T1-GE3

stock de pièces: 113546

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 6A, Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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SI4963BDY-T1-E3

stock de pièces: 147270

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 4.9A, Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.5A, 4.5V, Vgs(th) (Max) @ Id: 1.4V @ 250µA,

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SI1926DL-T1-GE3

stock de pièces: 137693

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 370mA, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 340mA, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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SQJQ906E-T1_GE3

stock de pièces: 8627

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 95A (Tc), Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 5A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA,

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SI4542DY-T1-E3

stock de pièces: 5348

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V, Vgs(th) (Max) @ Id: 1V @ 250µA (Min),

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SIZ320DT-T1-GE3

stock de pièces: 9923

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 25V, Courant - Vidange continue (Id) @ 25°C: 30A (Tc), 40A (Tc), Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA,

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SIZ926DT-T1-GE3

stock de pièces: 127180

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 25V, Courant - Vidange continue (Id) @ 25°C: 40A (Tc), 60A (Tc), Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA,

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SIZ328DT-T1-GE3

stock de pièces: 221

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 25V, Courant - Vidange continue (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 15 mOhm @ 5A, 10V, 10 mOhm @ 5A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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SIZF916DT-T1-GE3

stock de pièces: 281

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 23A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 4 mOhm @ 10A, 10V, 1.25 mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA,

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SI7905DN-T1-E3

stock de pièces: 73624

Type FET: 2 P-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 6A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 5A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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SI1900DL-T1-GE3

stock de pièces: 337

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 630mA (Ta), 590mA (Ta), Rds On (Max) @ Id, Vgs: 480 mOhm @ 590mA, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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SISB46DN-T1-GE3

stock de pièces: 104289

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 11.71 mOhm @ 5A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA,

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SIZ988DT-T1-GE3

stock de pièces: 16265

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 40A (Tc), 60A (Tc), Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 10A, 10V, 4.1 mOhm @ 19A, 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA,

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SI6913DQ-T1-E3

stock de pièces: 71472

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 12V, Courant - Vidange continue (Id) @ 25°C: 4.9A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 5.8A, 4.5V, Vgs(th) (Max) @ Id: 900mV @ 400µA,

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SI4670DY-T1-E3

stock de pièces: 139946

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 25V, Courant - Vidange continue (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA,

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SI5922DU-T1-GE3

stock de pièces: 127635

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 5A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA,

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SIZ348DT-T1-GE3

stock de pièces: 277

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 18A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 7.12 mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA,

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SIA931DJ-T1-GE3

stock de pièces: 160155

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 4.5A, Rds On (Max) @ Id, Vgs: 65 mOhm @ 3A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA,

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SI5904DC-T1-E3

stock de pièces: 2972

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 3.1A, Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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SI4965DY-T1-GE3

stock de pièces: 3019

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 8V, Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 4.5V, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min),

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SI1902CDL-T1-GE3

stock de pièces: 181662

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 1.1A, Rds On (Max) @ Id, Vgs: 235 mOhm @ 1A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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SIA936EDJ-T1-GE3

stock de pièces: 3020

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 4.5A, Rds On (Max) @ Id, Vgs: 34 mOhm @ 4A, 4.5V, Vgs(th) (Max) @ Id: 1.3V @ 250µA,

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SQ4532AEY-T1_GE3

stock de pièces: 10809

Type FET: N and P-Channel, Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc), Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.9A, 10V, 70 mOhm @ 3.5A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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SI4532ADY-T1-GE3

stock de pièces: 135915

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 3.7A, 3A, Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.9A, 10V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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SI7236DP-T1-E3

stock de pièces: 45599

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 60A, Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20.7A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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SI4936BDY-T1-GE3

stock de pièces: 125167

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 6.9A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.9A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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SIZ902DT-T1-GE3

stock de pièces: 110652

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 16A, Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA,

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SIZ720DT-T1-GE3

stock de pièces: 109371

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 16A, Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 16.8A, 10V, Vgs(th) (Max) @ Id: 2V @ 250µA,

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SI4200DY-T1-GE3

stock de pièces: 161224

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 25V, Courant - Vidange continue (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.3A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA,

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SQJ560EP-T1_GE3

stock de pièces: 9941

Type FET: N and P-Channel, Fonction FET: Standard, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 30A (Tc), 18A (Tc), Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V, 52.6 mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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SI4542DY-T1-GE3

stock de pièces: 2980

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V, Vgs(th) (Max) @ Id: 1V @ 250µA (Min),

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SQJ941EP-T1-GE3

stock de pièces: 3133

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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SQJ200EP-T1_GE3

stock de pièces: 165186

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 20A, 60A, Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 16A, 10V, Vgs(th) (Max) @ Id: 2V @ 250µA,

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SIZF906DT-T1-GE3

stock de pièces: 98746

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA,

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SI4963BDY-T1-GE3

stock de pièces: 89691

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 4.9A, Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.5A, 4.5V, Vgs(th) (Max) @ Id: 1.4V @ 250µA,

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SI5517DU-T1-GE3

stock de pièces: 139934

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 6A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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