Transistors - FET, MOSFET - Tableaux | Produits à semi-conducteurs discrets | 18

SI7964DP-T1-GE3

stock de pièces: 2820

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 6.1A, Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA,

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SIA778DJ-T1-GE3

stock de pièces: 103692

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 12V, 20V, Courant - Vidange continue (Id) @ 25°C: 4.5A, 1.5A, Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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SIF902EDZ-T1-E3

stock de pièces: 2784

Type FET: 2 N-Channel (Dual) Common Drain, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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SI5905BDC-T1-GE3

stock de pièces: 3293

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 8V, Courant - Vidange continue (Id) @ 25°C: 4A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.3A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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SI7911DN-T1-E3

stock de pièces: 2776

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 4.2A, Rds On (Max) @ Id, Vgs: 51 mOhm @ 5.7A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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SI8901EDB-T2-E1

stock de pièces: 2810

Type FET: 2 P-Channel (Dual) Common Drain, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 3.5A, Vgs(th) (Max) @ Id: 1V @ 350µA,

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SI7948DP-T1-GE3

stock de pièces: 3297

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 3A, Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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SIA911DJ-T1-E3

stock de pièces: 2797

Type FET: 2 P-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 4.5A, Rds On (Max) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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SI6928DQ-T1-E3

stock de pièces: 2806

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 4A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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SIA914ADJ-T1-GE3

stock de pièces: 101260

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 4.5A, Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.7A, 4.5V, Vgs(th) (Max) @ Id: 900mV @ 250µA,

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SI3529DV-T1-E3

stock de pièces: 2823

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 2.5A, 1.95A, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.2A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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SI4834BDY-T1-GE3

stock de pièces: 2808

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 5.7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA,

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SI4569DY-T1-E3

stock de pièces: 2765

Type FET: N and P-Channel, Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 7.6A, 7.9A, Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs(th) (Max) @ Id: 2V @ 250µA,

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SI5915DC-T1-GE3

stock de pièces: 2892

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 8V, Courant - Vidange continue (Id) @ 25°C: 3.4A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min),

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SI7925DN-T1-GE3

stock de pièces: 2863

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 12V, Courant - Vidange continue (Id) @ 25°C: 4.8A, Rds On (Max) @ Id, Vgs: 42 mOhm @ 6.5A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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SIZ700DT-T1-GE3

stock de pièces: 110609

Type FET: 2 N-Channel (Half Bridge), Fonction FET: Standard, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 16A, Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA,

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SI3588DV-T1-GE3

stock de pièces: 2780

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 2.5A, 570mA, Rds On (Max) @ Id, Vgs: 80 mOhm @ 3A, 4.5V, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min),

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SI7540DP-T1-E3

stock de pièces: 2781

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 12V, Courant - Vidange continue (Id) @ 25°C: 7.6A, 5.7A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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SI4562DY-T1-GE3

stock de pièces: 2828

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V, Vgs(th) (Max) @ Id: 1.6V @ 250µA,

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SQJ962EP-T1-GE3

stock de pièces: 3339

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 60V, Courant - Vidange continue (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA,

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SI4562DY-T1-E3

stock de pièces: 2860

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V, Vgs(th) (Max) @ Id: 1.6V @ 250µA,

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SI3983DV-T1-E3

stock de pièces: 2699

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 2.1A, Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 250µA,

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SIA913DJ-T1-GE3

stock de pièces: 2844

Type FET: 2 P-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 12V, Courant - Vidange continue (Id) @ 25°C: 4.5A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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SI3983DV-T1-GE3

stock de pièces: 2859

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 2.1A, Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 250µA,

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SI5515DC-T1-E3

stock de pièces: 153398

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 4.4A, 3A, Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA,

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SI1557DH-T1-E3

stock de pièces: 2849

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 12V, Courant - Vidange continue (Id) @ 25°C: 1.2A, 770mA, Rds On (Max) @ Id, Vgs: 235 mOhm @ 1.2A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 100µA,

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VQ1006P

stock de pièces: 2955

Type FET: 4 N-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 90V, Courant - Vidange continue (Id) @ 25°C: 400mA, Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA,

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SIA513DJ-T1-GE3

stock de pièces: 2783

Type FET: N and P-Channel, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 4.5A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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VQ3001P-E3

stock de pièces: 2909

Type FET: 2 N and 2 P-Channel, Fonction FET: Standard, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 850mA, 600mA, Rds On (Max) @ Id, Vgs: 1 Ohm @ 1A, 12V, Vgs(th) (Max) @ Id: 2.5V @ 1mA,

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SI7946DP-T1-E3

stock de pièces: 2803

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 150V, Courant - Vidange continue (Id) @ 25°C: 2.1A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 3.3A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA,

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SI4952DY-T1-E3

stock de pièces: 3283

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 25V, Courant - Vidange continue (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA,

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SIF912EDZ-T1-E3

stock de pièces: 3336

Type FET: 2 N-Channel (Dual) Common Drain, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 7.4A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.4A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA,

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SI4501ADY-T1-GE3

stock de pièces: 2879

Type FET: N and P-Channel, Common Drain, Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, 8V, Courant - Vidange continue (Id) @ 25°C: 6.3A, 4.1A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA,

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SI1958DH-T1-E3

stock de pièces: 2701

Type FET: 2 N-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 20V, Courant - Vidange continue (Id) @ 25°C: 1.3A, Rds On (Max) @ Id, Vgs: 205 mOhm @ 1.3A, 4.5V, Vgs(th) (Max) @ Id: 1.6V @ 250µA,

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SI4908DY-T1-E3

stock de pièces: 2706

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 40V, Courant - Vidange continue (Id) @ 25°C: 5A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA,

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SI4947ADY-T1-E3

stock de pièces: 2709

Type FET: 2 P-Channel (Dual), Fonction FET: Logic Level Gate, Drain à la tension de source (Vdss): 30V, Courant - Vidange continue (Id) @ 25°C: 3A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.9A, 10V, Vgs(th) (Max) @ Id: 1V @ 250µA (Min),

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