Transistors - FET, MOSFET - Tableaux

QJD1210010

stock de pièces: 2869

Type FET: 2 N-Channel (Dual), Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs(th) (Max) @ Id: 5V @ 10mA,

QJD1210SA1

stock de pièces: 2941

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 100A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs(th) (Max) @ Id: 1.6V @ 34mA,

QJD1210SA2

stock de pièces: 2896

Type FET: 2 N-Channel (Dual), Fonction FET: Standard, Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 100A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs(th) (Max) @ Id: 1.6V @ 34mA,

QJD1210SB1

stock de pièces: 2931

QJD1210011

stock de pièces: 3308

Type FET: 2 N-Channel (Dual), Fonction FET: Silicon Carbide (SiC), Drain à la tension de source (Vdss): 1200V (1.2kV), Courant - Vidange continue (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs(th) (Max) @ Id: 5V @ 10mA,