Configuration de sortie: Half Bridge, Applications: General Purpose, Interface: On/Off, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 1.53 Ohm,
Configuration de sortie: Half Bridge, Applications: General Purpose, Interface: On/Off, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 400 mOhm,
Configuration de sortie: Half Bridge, Applications: General Purpose, Interface: On/Off, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 1 Ohm,
Configuration de sortie: Half Bridge, Applications: General Purpose, Interface: On/Off, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 740 mOhm,
Configuration de sortie: Half Bridge, Applications: General Purpose, Interface: On/Off, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 600 mOhm,
Configuration de sortie: Half Bridge, Applications: General Purpose, Interface: On/Off, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 1 Ohm,
Configuration de sortie: Half Bridge, Applications: General Purpose, Interface: On/Off, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 740 mOhm,
Configuration de sortie: Half Bridge, Applications: General Purpose, Interface: On/Off, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 260 mOhm,
Configuration de sortie: Half Bridge, Applications: General Purpose, Interface: On/Off, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 600 mOhm,
Configuration de sortie: Half Bridge, Applications: General Purpose, Interface: On/Off, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 1.53 Ohm,
