Configuration de sortie: Half Bridge, Applications: General Purpose, Interface: PWM, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 100 mOhm,
Configuration de sortie: Half Bridge, Applications: General Purpose, Interface: PWM, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 100 mOhm,
Configuration de sortie: Half Bridge, Applications: General Purpose, Interface: PWM, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 100 mOhm,
Configuration de sortie: Half Bridge (2), Applications: General Purpose, Interface: PWM, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 150 mOhm,
Configuration de sortie: Half Bridge, Applications: General Purpose, Interface: PWM, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 100 mOhm,
Configuration de sortie: Half Bridge (2), Applications: General Purpose, Interface: PWM, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 150 mOhm,
Configuration de sortie: Half Bridge, Applications: General Purpose, Interface: PWM, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 100 mOhm,
Configuration de sortie: Half Bridge, Applications: General Purpose, Interface: PWM, Type de charge: Inductive, La technologie: Power MOSFET, Rds On (Typ): 100 mOhm,